Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates
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چکیده
منابع مشابه
Infrared spectroscopy of intraband transitions in Ge/Si quantum dot superlattices
We report the study of infrared spectroscopy of intraband transitions in Ge/Si quantum dot superlattices. The superlattices, which were grown on (001) oriented Si substrates by a solid source molecular beam epitaxy system, are composed mainly of 20 or 30 periods of Ge dot layers and Si spacer films. The structural properties of them and of the uncapped Ge dots grown on the surfaces of some of t...
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تاریخ انتشار 2016